DocumentCode :
2641182
Title :
High Reflectivity, 1.55μm InP/lnGaAsP Surface-emitting-laser Mirror Grown By Chemical Beam Epitaxy
Author :
Choa, F.S. ; Tai, K. ; Tsang, W.T. ; Chu, S.N.G.
Author_Institution :
AT&T Bell Laboratories
fYear :
1991
fDate :
29 Jul-2 Aug 1991
Firstpage :
23
Lastpage :
24
Keywords :
Chemicals; Crystalline materials; Fluctuations; Indium phosphide; Mirrors; Optical surface waves; Reflectivity; Surface emitting lasers; Vertical cavity surface emitting lasers; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
Type :
conf
DOI :
10.1109/LEOSST.1991.638925
Filename :
638925
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2641182
بازگشت