DocumentCode :
2641226
Title :
A low-phase-noise 61 GHz push-push VCO with divider chain and buffer in SiGe BiCMOS for 122 GHz ISM applications
Author :
Sun, Yaoming ; Scheytt, Christoph J.
Author_Institution :
IHP, Frankfurt (Oder), Germany
fYear :
2012
fDate :
17-19 June 2012
Firstpage :
79
Lastpage :
82
Abstract :
This paper presents a 61 GHz push-push VCO with an integrated divide-by-eight divider and an output buffer in a 130 nm SiGe BiCMOS process. The VCO core features a differential Colpitts topology with coupled inductors to improve phase noise performance. Eight sub-bands are realized by three digital tuned varicaps, which are placed in parallel with the analog tuned varicap. Its tuning range is 60.85-63.65 GHz with a measured output power of above 10 dBm. The measured phase noise is -106 dBc/Hz at 1 MHz offset with an overall VCO/buffer power dissipation of 93.6 mW. The VCO/buffer has achieved an efficiency of 14%, a figure-of-merit including output power (FOMP) of 193.1 dBc/Hz and an ITRS FOM of 185.6 dBc/Hz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; inductors; phase noise; varactors; voltage dividers; voltage-controlled oscillators; BiCMOS process; Colpitts topology; ISM application; ITRS FOM; VCO-buffer power dissipation; analog tuned varicap; coupled inductor; digital tuned varicap; divider chain; frequency 60.85 GHz to 63.65 GHz; integrated divide-by-eight divider; low-phase-noise; phase noise performance; power 93.6 mW; push-push VCO; size 130 nm; Frequency conversion; Inductors; Phase noise; Power generation; Q factor; Tuning; Voltage-controlled oscillators; 122 GHz ISM; 60 GHz; Millimeter wave integrated circuits; VCO; digital sub-bands; low phase noise; push-push;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
ISSN :
1529-2517
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2012.6242236
Filename :
6242236
Link To Document :
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