Simulation of OEIC´s using PSPICE

Author

Al-Mashary, Bandar A M

Author_Institution

Dept. of Electr. Eng., King Saud Univ., Riyadh, Saudi Arabia

fYear

1999

fDate

22-24 Nov. 1999

Firstpage

39

Lastpage

42

Abstract

The PSPICE simulator is extended to simulate an optoelectronic integrated circuit (OEIC) composed of a vertical-cavity surface emitting laser (VCSEL) and two MOSFETs with 0.8 μm channel length. A comprehensive three-level model for a quantum-well semiconductor laser diode is used to build a sub-circuit for the VCSEL. The measured DC and transient response of the OEIC are used to extract the model parameters. Simulation results using these parameters are compared with measurements and a good agreement is obtained. Enhancements in the optical conversion efficiency and modulation bandwidth of the OEIC is predicted by simulation if a 0.5 μm channel is used.

Keywords

MOSFET; SPICE; circuit simulation; integrated circuit measurement; integrated circuit modelling; integrated optoelectronics; optical modulation; semiconductor device models; semiconductor lasers; surface emitting lasers; transient response; 0.5 micron; 0.8 micron; DC response; MOSFETs; OEIC; OEIC simulation; PSPICE; PSPICE simulator; VCSEL; VCSEL sub-circuit; channel length; channel width; model parameter extraction; modulation bandwidth; optical conversion efficiency; optoelectronic integrated circuit; quantum-well semiconductor laser diode; simulation; three-level model; transient response; vertical-cavity surface emitting laser; Circuit simulation; Integrated circuit modeling; Laser modes; MOSFETs; Optoelectronic devices; Quantum well lasers; SPICE; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1999. ICM '99. The Eleventh International Conference on

Print_ISBN

0-7803-6643-3

Type

conf

DOI

10.1109/ICM.2000.884800

Filename

884800