• DocumentCode
    2641553
  • Title

    Temperature-aware NBTI modeling and the impact of input vector control on performance degradation

  • Author

    Wang, Yu ; Luo, Hong ; He, Ku ; Luo, Rong ; Yang, Huazhong ; Xie, Yuan

  • Author_Institution
    Dept. of E.E., Tsinghua Univ., Beijing
  • fYear
    2007
  • fDate
    16-20 April 2007
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    As technology scales, negative bias temperature instability (NBTI), which causes temporal performance degradation in digital circuits by affecting PMOS threshold voltage, is emerging as one of the major circuit reliability concerns. In this paper, the authors first investigate the impact of NBTI on PMOS devices and propose a novel temporal performance degradation model for digital circuits considering the temperature difference between active and standby mode. For the first time, the impact of input vector control (to minimize standby leakage) on the NBTI is investigated. Minimum leakage vectors, which lead to minimum circuit performance degradation and remains maximum leakage reduction rate, are selected and used during the standby mode. Furthermore, the potential to save the circuit performance degradation by internal node control techniques during circuit standby mode is discussed. Our simulation results show that: 1) the active and standby time ratio and the standby mode temperature have considerable impact on the circuit performance degradation; 2) the NBTI-aware IVC technique leads to an average 3% savings of the total circuit degradation; while the potential of internal node control may lead to 10% savings of the total circuit degradation
  • Keywords
    MOS digital integrated circuits; integrated circuit modelling; integrated circuit reliability; thermal stability; NBTI; PMOS threshold voltage; circuit reliability; circuit standby mode; digital circuits; input vector control; internal node control; negative bias temperature instability; performance degradation; Circuit optimization; Circuit simulation; Degradation; Digital circuits; MOS devices; Negative bias temperature instability; Niobium compounds; Temperature control; Threshold voltage; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Automation & Test in Europe Conference & Exhibition, 2007. DATE '07
  • Conference_Location
    Nice
  • Print_ISBN
    978-3-9810801-2-4
  • Type

    conf

  • DOI
    10.1109/DATE.2007.364650
  • Filename
    4211855