Title :
Analysis of the structural properties of polycrystalline silicon germanium films
Author :
Sedky, Sherif ; Fiorini, Paolo ; Loreti, Stefano ; Cayma, Matty ; Baert, K. ; Vanhoof, Chris
Author_Institution :
Dept. of Eng. Phys., Cairo Univ., Giza, Egypt
Abstract :
In this work, poly SiGe is proposed as a suitable material for surface micromachining applications that require a low thermal budget. The effect of the deposition conditions and layer thickness on the structural and mechanical properties of poly SiGe is analyzed by means of transmission electron microscopy (TEM) and X-ray diffraction spectroscopy (XRD). It is demonstrated that using as-grown poly SiGe (deposited at 625°C), a low tensile stress (+60 MPa) and a negligible stress gradient can be achieved.
Keywords :
Ge-Si alloys; X-ray diffraction; internal stresses; micromachining; micromechanical devices; semiconductor materials; stress analysis; surface structure; transmission electron microscopy; 625 C; SiGe; TEM; X-ray diffraction spectroscopy; XRD; as-grown poly SiGe; deposition conditions; layer thickness; mechanical properties; poly SiGe films; polycrystalline silicon germanium films; stress gradient; structural properties; surface micromachining applications; tensile stress; thermal budget; transmission electron microscopy; Germanium silicon alloys; Mechanical factors; Micromachining; Semiconductor films; Silicon germanium; Spectroscopy; Tensile stress; Transmission electron microscopy; X-ray diffraction; X-ray scattering;
Conference_Titel :
Microelectronics, 1999. ICM '99. The Eleventh International Conference on
Print_ISBN :
0-7803-6643-3
DOI :
10.1109/ICM.2000.884807
