Title :
GEANT4 simulations in terms of radiation hardness of commercially available SRAM
Author :
Moujbani, Aymen ; Weide-Zaage, Kirsten ; Romer, Berthold ; Sabath, Frank
Author_Institution :
RESRI Group, Leibniz Univ. Hannover, Hannover, Germany
Abstract :
Commercial of the shelf (COTS) SRAMS were investigated by measurements and simulation in terms of radiation hardness. For the simulations the GEANT4 tool was used. With GEANT4 it is possible to determine the different particles generated by the applied energy as well as the radiation source. It was found that the single event upsets (SEU) is related to the radiation energy, technology node and react differently for the investigated SRAM. Furthermore a possible correlation between the generated particles and the SEU was found.
Keywords :
SRAM chips; radiation hardening (electronics); GEANT4 tool; SRAM; radiation hardness; single event upsets; Atmospheric modeling; Conferences; Neutrons; Silicon;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2015 16th International Conference on
Conference_Location :
Budapest
Print_ISBN :
978-1-4799-9949-1
DOI :
10.1109/EuroSimE.2015.7103106
