Title :
A three-stage cascaded distributed amplifier with GBW exceeding 1.5THz
Author :
Arbabian, Amin ; Niknejad, Ali M.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
A three-stage cascaded distributed amplifier is designed in a 0.13μm SiGe BiCMOS process. By optimizing the amplifier both at the architecture and element level, an extremely large measured gain-bandwidth product in excess of 1.5THz is obtained. The core amplifier consumes 75mA from a 3.3V supply and provides an average gain of 24dB from 15GHz to at least 110GHz (limited by equipment BW). A distributed RF-choke design is employed to provide the bias current to the three cascaded stages. The pass-band gain stays between 23 and 26.5dB.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; distributed amplifiers; millimetre wave amplifiers; millimetre wave integrated circuits; semiconductor materials; BiCMOS process; SiGe; core amplifier; current 75 mA; distributed RF-choke design; gain 23 dB to 26.5 dB; gain-bandwidth product; size 0.13 mum; three-stage cascaded distributed amplifier; voltage 3.3 V; Bandwidth; CMOS integrated circuits; Capacitance; Capacitors; Impedance; Inductors; Silicon germanium; BiCMOS integrated circuits; Distributed Amplifiers; Distributed RF-Choke; Millimeter wave integrated circuits; Millimeter-wave Amplifiers; Pulse Amplifiers; Wideband Amplifiers;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2012.6242266
