A three-stage cascaded distributed amplifier with GBW exceeding 1.5THz

Author

Arbabian, Amin ; Niknejad, Ali M.

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA

fYear

2012

fDate

17-19 June 2012

Firstpage

211

Lastpage

214

Abstract

A three-stage cascaded distributed amplifier is designed in a 0.13μm SiGe BiCMOS process. By optimizing the amplifier both at the architecture and element level, an extremely large measured gain-bandwidth product in excess of 1.5THz is obtained. The core amplifier consumes 75mA from a 3.3V supply and provides an average gain of 24dB from 15GHz to at least 110GHz (limited by equipment BW). A distributed RF-choke design is employed to provide the bias current to the three cascaded stages. The pass-band gain stays between 23 and 26.5dB.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; distributed amplifiers; millimetre wave amplifiers; millimetre wave integrated circuits; semiconductor materials; BiCMOS process; SiGe; core amplifier; current 75 mA; distributed RF-choke design; gain 23 dB to 26.5 dB; gain-bandwidth product; size 0.13 mum; three-stage cascaded distributed amplifier; voltage 3.3 V; Bandwidth; CMOS integrated circuits; Capacitance; Capacitors; Impedance; Inductors; Silicon germanium; BiCMOS integrated circuits; Distributed Amplifiers; Distributed RF-Choke; Millimeter wave integrated circuits; Millimeter-wave Amplifiers; Pulse Amplifiers; Wideband Amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE

Conference_Location

Montreal, QC

ISSN

1529-2517

Print_ISBN

978-1-4673-0413-9

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2012.6242266

Filename

6242266