Title :
Wideband envelope tracking power amplifier for LTE application
Author :
Kim, Dongsu ; Kang, Daehyun ; Kim, Jooseung ; Cho, Yunsung ; Kim, Bumman
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
This paper describes an envelope tracking power amplifier for LTE application with large channel bandwidth up to 30 MHz. For the wideband operation, a supply modulator with accurate and fast envelope tracking is essential. The bandwidth of the supply modulator is increased about 2 times without stability degradation by inserting a zero in a feedback path of a linear amplifier. The supply modulator is fabricated using CMOS process and a power amplifier is fabricated using HBT process. An implemented envelope tracking power amplifier delivers efficiencies of 40.0/39.4/38.5% for 10/20/30 MHz LTE signals at output power of 27 dBm.
Keywords :
CMOS integrated circuits; HF amplifiers; Long Term Evolution; feedback amplifiers; heterojunction bipolar transistors; modulators; power amplifiers; wideband amplifiers; CMOS process; HBT process; LTE application; LTE signals; feedback path; frequency 10 MHz; frequency 20 MHz; frequency 30 MHz; large channel bandwidth; linear amplifier; supply modulator; wideband envelope tracking power amplifier; Gain; Modulation; Power amplifiers; Power generation; Switches; Wideband; Envelope tracking; long term evolution (LTE); polar transmitter; power amplifier; wide bandwidth;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2012.6242280
