Wideband envelope tracking power amplifier for LTE application

Author

Kim, Dongsu ; Kang, Daehyun ; Kim, Jooseung ; Cho, Yunsung ; Kim, Bumman

Author_Institution

Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

fYear

2012

fDate

17-19 June 2012

Firstpage

275

Lastpage

278

Abstract

This paper describes an envelope tracking power amplifier for LTE application with large channel bandwidth up to 30 MHz. For the wideband operation, a supply modulator with accurate and fast envelope tracking is essential. The bandwidth of the supply modulator is increased about 2 times without stability degradation by inserting a zero in a feedback path of a linear amplifier. The supply modulator is fabricated using CMOS process and a power amplifier is fabricated using HBT process. An implemented envelope tracking power amplifier delivers efficiencies of 40.0/39.4/38.5% for 10/20/30 MHz LTE signals at output power of 27 dBm.

Keywords

CMOS integrated circuits; HF amplifiers; Long Term Evolution; feedback amplifiers; heterojunction bipolar transistors; modulators; power amplifiers; wideband amplifiers; CMOS process; HBT process; LTE application; LTE signals; feedback path; frequency 10 MHz; frequency 20 MHz; frequency 30 MHz; large channel bandwidth; linear amplifier; supply modulator; wideband envelope tracking power amplifier; Gain; Modulation; Power amplifiers; Power generation; Switches; Wideband; Envelope tracking; long term evolution (LTE); polar transmitter; power amplifier; wide bandwidth;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE

Conference_Location

Montreal, QC

ISSN

1529-2517

Print_ISBN

978-1-4673-0413-9

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2012.6242280

Filename

6242280