GaAs Bi-FET RF front-end MMIC for WiMAX applications

Author

Wu, Ping-Hsun ; Li, Jian-Yu ; Wang, Yu-Chi ; Hsu, Powen

Author_Institution

Inf. & Comm. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2012

fDate

17-19 June 2012

Firstpage

287

Lastpage

290

Abstract

A single-chip WiMAX RF front-end MMIC using GaAs Bi-FET process of WIN semiconductor corporation is presented. The MMIC integrates an HBT power amplifier, an E-mode pHEMT low-noise amplifier, and a D-mode pHEMT antenna switch. On-chip thermal and electrical isolation structures mitigate the interference problem from high-power devices. The MMIC delivers 24 dBm linear power of 64QAM 802.16e signal with 17% power-added efficiency at antenna switch output. The chip size is 1.85 mm × 1.1 mm.

Keywords

III-V semiconductors; MMIC power amplifiers; WiMax; antennas; field effect MMIC; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; interference suppression; low noise amplifiers; quadrature amplitude modulation; 64QAM 802.16e signal; BiFET process; GaAs; HBT power amplifier; WIN semiconductor corporation; d-mode pHEMT antenna switch; e-mode pHEMT low-noise amplifier; efficiency 17 percent; electrical isolation structure; high-power device; interference mitigation problem; linear power; on-chip thermal structure; power-added efficiency; single-chip WiMAX RF front-end MMIC; Gain; MMICs; Power amplifiers; Power generation; Radio frequency; Switches; WiMAX; Antenna switch; Bi-FET; RF front-end; WiMAX; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE

Conference_Location

Montreal, QC

ISSN

1529-2517

Print_ISBN

978-1-4673-0413-9

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2012.6242283

Filename

6242283