Title :
Low voltage BiCMOS switched-current circuits
Author :
Hamed, H.F.A. ; Khalil, A.H. ; Embabi, S.H.K. ; Salama, A.E.
Author_Institution :
Dept. of Electr. Eng., El-Menia Univ., Egypt
Abstract :
A study of the advantages of using BiCMOS technology in the design of SI current memory cells is presented. A double sampling bilinear integrator based on BiCMOS current memory cell has been built. As an application for the BiCMOS integrator, a third order low pass elliptic filter has been designed. The simulation results show an accurate filter response for sampling frequencies up to 40 MHz, using a nominal 3 V power supply and the THD is -40 dB at iin=0.5Ibias.
Keywords :
BiCMOS memory circuits; circuit simulation; elliptic filters; harmonic distortion; integrated circuit design; integrated circuit modelling; integrating circuits; low-pass filters; low-power electronics; sampled data circuits; switched current circuits; 3 V; 40 MHz; BiCMOS current memory cell; BiCMOS integrator; BiCMOS technology; SI current memory cell design; THD; double sampling bilinear integrator; filter response; low voltage BiCMOS switched-current circuits; power supply; sampling frequencies; simulation; third order low pass elliptic filter design; BiCMOS integrated circuits; Bipolar transistors; Equations; Frequency; Low pass filters; Low voltage; MOSFETs; Sampling methods; Switches; Switching circuits;
Conference_Titel :
Microelectronics, 1999. ICM '99. The Eleventh International Conference on
Print_ISBN :
0-7803-6643-3
DOI :
10.1109/ICM.2000.884841
