DocumentCode :
2642324
Title :
A PAE of 17.5% Ka-band balanced frequency doubler with conversion gain of 20 dB
Author :
Li, Jiankang ; Lu, Zhong ; Xiong, Yong-Zhong ; Hou, Debin ; Wang, Ren ; Goh, Wang Ling ; Wu, Wen
Author_Institution :
Nanjing Univ. of Sci. & Technol., Nanjing, China
fYear :
2012
fDate :
17-19 June 2012
Firstpage :
345
Lastpage :
348
Abstract :
A frequency doubler from 27 to 41 GHz fabricated in 0.13-μm SiGe BiCMOS technology with a maximum output power of 8 dBm and a power added efficiency (PAE) of 17.5% at dc power consumption of 35 mW is presented. It consists of a balun, a driver amplifier (DA), a common-base (CB) core and a medium power amplifier. The CB topology with balun is designed for wider bandwidth and better matching. The measured results showed that the doubler presents a gain of 16.8-19.8 dB, an output power of 1.3-4.3 dBm, and a fundamental rejection of better than 25.7 dB from 27 to 41 GHz with -15.5 dBm input power. The chip size is 0.75 × 0.45 mm2.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC power amplifiers; baluns; driver circuits; field effect MIMIC; field effect MMIC; frequency multipliers; low-power electronics; millimetre wave power amplifiers; network topology; BiCMOS technology; CB topology; Ka-band balanced frequency doubler; PAE; SiGe; balun; common-base core; conversion gain; dc power consumption; driver amplifier; frequency 27 GHz to 41 GHz; medium power amplifier; power 35 mW; power added efficiency; size 0.13 mum; Frequency conversion; Frequency measurement; Gain; Impedance matching; Power amplifiers; Power generation; Silicon germanium; Balanced frequency doubler; SiGe BiCMOS; high efficiency; high output power;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
ISSN :
1529-2517
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2012.6242296
Filename :
6242296
Link To Document :
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