Nano crystal quantum dots tunable on-chip ESD protection

Author

Shi, Zitao ; Wang, Xin ; Liu, Jian ; Lin, Lin ; Zhao, Hui ; Fang, Qiang ; Wang, Li ; Zhang, Chen ; Fan, Siqiang ; Tang, He ; Li, Bei ; Wang, Albert ; Liu, Jianlin ; Cheng, Yuhua ; Zhao, Bin

fYear

2012

fDate

17-19 June 2012

Firstpage

359

Lastpage

362

Abstract

This paper reports a new nano crystal quantum dots (NC-QD) tunable on-chip electrostatic discharge (ESD) protection mechanism and structures. Experiments validated the programmable ESD protection concept. Prototype structures achieved an adjustable ESD triggering voltage range of 2.5V, very fast ESD response of ~100pS, ESD protection density of 25mA/μm in human body model (HBM) and 400mA/μm in charged device model (CDM), and very low leakage current of Ileak~15pA. It can be potentially used to design field-programmable ESD protection for mixed-signal IC in nano scales.

Keywords

CMOS integrated circuits; circuit tuning; electrostatic discharge; leakage currents; mixed analogue-digital integrated circuits; nanostructured materials; programmable circuits; quantum dots; trigger circuits; CDM; HBM; NC-QD tuning; charged device model; field-programmable ESD protection; human body model; leakage current; mixed-signal IC; nanocrystal quantum dot tuning; nanoscaling; programmable on-chip ESD protection; programmable on-chip electrostatic discharge protection; voltage 2.5 V; Crystals; Electrostatic discharges; Integrated circuits; Logic gates; MOSFET circuits; Programming; Time measurement; ESD protection; Nano Crystal Quantum Dot; electrostatic discharge; tunable;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE

Conference_Location

Montreal, QC

ISSN

1529-2517

Print_ISBN

978-1-4673-0413-9

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2012.6242299

Filename

6242299