Title :
Nano crystal quantum dots tunable on-chip ESD protection
Author :
Shi, Zitao ; Wang, Xin ; Liu, Jian ; Lin, Lin ; Zhao, Hui ; Fang, Qiang ; Wang, Li ; Zhang, Chen ; Fan, Siqiang ; Tang, He ; Li, Bei ; Wang, Albert ; Liu, Jianlin ; Cheng, Yuhua ; Zhao, Bin
Abstract :
This paper reports a new nano crystal quantum dots (NC-QD) tunable on-chip electrostatic discharge (ESD) protection mechanism and structures. Experiments validated the programmable ESD protection concept. Prototype structures achieved an adjustable ESD triggering voltage range of 2.5V, very fast ESD response of ~100pS, ESD protection density of 25mA/μm in human body model (HBM) and 400mA/μm in charged device model (CDM), and very low leakage current of Ileak~15pA. It can be potentially used to design field-programmable ESD protection for mixed-signal IC in nano scales.
Keywords :
CMOS integrated circuits; circuit tuning; electrostatic discharge; leakage currents; mixed analogue-digital integrated circuits; nanostructured materials; programmable circuits; quantum dots; trigger circuits; CDM; HBM; NC-QD tuning; charged device model; field-programmable ESD protection; human body model; leakage current; mixed-signal IC; nanocrystal quantum dot tuning; nanoscaling; programmable on-chip ESD protection; programmable on-chip electrostatic discharge protection; voltage 2.5 V; Crystals; Electrostatic discharges; Integrated circuits; Logic gates; MOSFET circuits; Programming; Time measurement; ESD protection; Nano Crystal Quantum Dot; electrostatic discharge; tunable;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2012.6242299
