Title :
Circuit-Level Modeling and Detection of Metallic Carbon Nanotube Defects in Carbon Nanotube FETs
Author :
Hashempour, Hamidreza ; Lombardi, Fabrizio
Author_Institution :
Independent Researcher, Tehran
Abstract :
Carbon nanotube field effect transistors (CNTFET) are promising nano-scaled devices for implementing high performance, very dense and low power circuits. The core of a CNTFET is a carbon nanotube. Its conductance property is determined by the so-called chirality of the tube; chirality is difficult to control during manufacturing. This results in conducting (metallic) nanotubes and defective CNTFETs similar to stuck-on (SON or source-drain short) faults, as encountered in classical MOS devices. This paper studies this phenomenon by using layout information and presents modeling and detection methodologies for nano-scaled defects arising from the presence of metallic carbon nanotubes. For CNTFET-based circuits (e.g. intramolecular), these defects are analyzed using a traditional stuck-at fault model. This analysis is applicable to primitive and complex gates. Simulation results are presented for detecting modeled metallic nanotube faults in CNTFETs using a single stuck-at fault test set. A high coverage is achieved (~98%)
Keywords :
carbon nanotubes; field effect transistors; nanotechnology; semiconductor device models; CNT; CNTFET; carbon nanotube; defect modeling; fault detection; nanotechnology; CNTFETs; Carbon nanotubes; Circuit faults; Circuit simulation; Circuit testing; Electrical fault detection; Fault detection; MOS devices; Manufacturing; Nanoscale devices; CNT; CNTFET; Carbon Nanotube; Defect Modeling; Fault Detection; Nanotechnology;
Conference_Titel :
Design, Automation & Test in Europe Conference & Exhibition, 2007. DATE '07
Conference_Location :
Nice
Print_ISBN :
978-3-9810801-2-4
DOI :
10.1109/DATE.2007.364397