Title :
F-RISC/G: AlGaAs/GaAs HBT standard cell library
Author :
Nah, K. ; Philhower, R. ; Van Etten, J.S. ; Simmons, S. ; Tsinker, V. ; Loy, J. ; Greub, H. ; McDonald, J.F.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A standard cell library for implementing Rensselaer´s fast reduced instruction set computer (F-RISC/G) project with Rockwell´s AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology is presented. The processor is targeted at an instruction cycle time of 1.0 ns. Differential current mode logic (CML) is used, and unloaded gate delays are 15-20 ps
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microprocessor chips; reduced instruction set computing; 1 ns; AlGaAs-GaAs; AlGaAs/GaAs heterojunction bipolar transistor; F-RISC/G; differential current mode logic; fast reduced instruction set computer; instruction cycle time; standard cell library; unloaded gate delays; Circuits; Decoding; Delay; Gallium arsenide; Heterojunction bipolar transistors; Libraries; Logic gates; MESFETs; Switches; Voltage;
Conference_Titel :
Computer Design: VLSI in Computers and Processors, 1991. ICCD '91. Proceedings, 1991 IEEE International Conference on
Conference_Location :
Cambridge, MA
Print_ISBN :
0-8186-2270-9
DOI :
10.1109/ICCD.1991.139902
