Title :
An improved VBIC model for InP DHBTs
Author :
Shi, Yuxia ; Jin, Zhi ; Su, Yongbo ; Cao, Yuxiong ; Wang, Yan
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
An emprical model is established for InP/InGaAs DHBTs based on the VBIC model. The heterojunction barrier and current blocking effect are considered in the current expressions. And new empirical models for transit time and collector capacitance are proposed by considering the voltage and current dependence. The excellent fitting results show that the improved model has better accuracy than the conventional VBIC model.
Keywords :
gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; DHBT; InP-InGaAs; collector capacitance; current blocking effect; emprical model; heterojunction barrier; improved VBIC model; transit time; Current measurement; Double heterojunction bipolar transistors; Heterojunctions; Indium gallium arsenide; Indium phosphide; Integrated circuit modeling; Mathematical model; InP/InGaAs DHBT; VBIC model; empirical model; heterojunction effect;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2012.6242310
