DocumentCode :
2642779
Title :
Reduction Of Residual Oxygen Incorporation In High-power Single Quantum Well Lasers Grown By Molecular Beam Epitaxy
Author :
Ovadia, Shlomo ; Meier, H.P. ; Iyer, Sridhar V. ; Parks, C.
Author_Institution :
IBM East Fishkill Facility
fYear :
1991
fDate :
29 Jul-2 Aug 1991
Firstpage :
35
Lastpage :
36
Keywords :
Electrons; Gallium arsenide; Instruments; Laser theory; Oxygen; Quantum well lasers; Semiconductor lasers; Superlattices; Temperature; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
Type :
conf
DOI :
10.1109/LEOSST.1991.638933
Filename :
638933
Link To Document :
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