FDTD analysis of distributed amplifiers based on the fully distributed model

Author

Mirzavand, R. ; Abdipour, A. ; Shishegar, A.A.

Author_Institution

E.E. Dept., Amirkabir Univ. of Technol., Tehran

fYear

2007

fDate

4-6 Dec. 2007

Firstpage

1

Lastpage

5

Abstract

In this paper a wave approach has been introduced to study the performance of a distributed amplifier. The time domain response of a FET is obtained by means of the fully distributed model. By applying the procedure to a pi-gate GaAs MESFET, the S matrix is computed from time domain results over a frequency range of 2-20 GHz. Scattering parameters of gate and drain lines are extracted from three-dimensional FDTD simulation. The result obtained by this wave approach is compared with device lumped model and Quasi static approach of transmission line.

Keywords

S-matrix theory; Schottky gate field effect transistors; finite difference time-domain analysis; gallium arsenide; travelling wave amplifiers; 3D FDTD simulation; FDTD analysis; GaAs; MESFET; S matrix; distributed amplifiers; frequency 2 GHz to 20 GHz; scattering parameters; time domain response; transmission line; Computational modeling; Distributed amplifiers; FETs; Finite difference methods; Frequency; Gallium arsenide; MESFETs; Scattering parameters; Time domain analysis; Transmission line matrix methods; Finite-Difference Time-Domain; MESFET; distributed amplifier; distributed model; scattering parameter;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Electromagnetics, 2007. APACE 2007. Asia-Pacific Conference on

Conference_Location

Melaka

Print_ISBN

978-1-4244-1434-5

Electronic_ISBN

978-1-4244-1435-2

Type

conf

DOI

10.1109/APACE.2007.4603907

Filename

4603907