DocumentCode :
2643112
Title :
AlGaAs Regrown On AiGaAs By MOCVD
Author :
Armour, E.A. ; Sun, S.Z. ; Zheng, K. ; Kopchik, D.P. ; Schaus, C.F.
Author_Institution :
University of New Mexico
fYear :
1991
fDate :
29 Jul-2 Aug 1991
Firstpage :
37
Lastpage :
38
Keywords :
Contracts; Diode lasers; Etching; Gallium arsenide; MOCVD; Passivation; Photoluminescence; Quantum well lasers; Surface emitting lasers; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
Type :
conf
DOI :
10.1109/LEOSST.1991.638935
Filename :
638935
Link To Document :
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