Title :
Frequency response enhancement of spiral inductor´s Q-factor by adopting defected ground structure in standard CMOS process
Author :
Ye, Yu ; Gu, Jian-Zhong ; Qian, Rong ; Sun, Xiao-Wei
Author_Institution :
Key Lab. of Terahertz Technol., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Abstract :
In this paper, a planar spiral inductor with defected ground structure is proposed. The single-π model is established. Equations of the self-resonate frequency and the frequency with maximum quality factor are obtained, in which explanations and approximate solutions are given. The proposed inductors were fabricated in 65nm CMOS technology. Measured results match well with simulations and models up to 75GHz. Compared with traditional inductors, the proposed inductor can improve the frequency with maximum quality factor from 16GHz to 34GHz and 27GHz to 55GHz, respectively, while achieving good flatness of quality factor within broadband millimeter-wave range. The measured maximum quality factor is around 12.
Keywords :
CMOS integrated circuits; Q-factor; defected ground structures; field effect MIMIC; frequency response; broadband millimeter-wave range; defected ground structure; frequency 16 GHz to 34 GHz; frequency 27 GHz to 55 GHz; frequency response enhancement; maximum quality factor; planar spiral inductor Q-factor; self-resonate frequency equation; single-π model; size 65 nm; standard CMOS process; CMOS integrated circuits; CMOS technology; Inductors; Mathematical model; Metals; Q factor; Spirals; CMOS technology; defected ground structure (DGS); flatness; frequency with maximum quality factor (ƒmax); spiral inductors;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2012.6242341
