Title :
Characterization and modeling of the junction diode for accurate RF model in the 36nm MOSFET
Author :
Wang, Yujen ; Tsao, Willy ; Zeng, Zheng
Author_Institution :
Mediatek Inc., Hsinchu, Taiwan
Abstract :
Different CV curves of junction diode were observed in the MOSFET with 36nm MOS for the fist time. Traditional characterization results of source/body and drain /body junction diode from longer channel MOSFET and large diode are not the same as those in the shorter channel and small diode. In this paper we discussed the discrepancies of traditional diode characterization and proposed a new way for short change MOS with 36 nm gate length by S-parameters.
Keywords :
MOSFET; S-parameters; UHF diodes; semiconductor device models; CV curves; MOSFET; RF model; S-parameters; drain-body junction diode; size 36 nm; source-body junction diode modelling; Fingers; Junctions; Logic gates; Radio frequency; Reactive power; Scattering parameters; Semiconductor device modeling; RF model; characterization; junction diode; short channel MOSFET;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2012.6242342
