DocumentCode
2643256
Title
Characterization and modeling of the junction diode for accurate RF model in the 36nm MOSFET
Author
Wang, Yujen ; Tsao, Willy ; Zeng, Zheng
Author_Institution
Mediatek Inc., Hsinchu, Taiwan
fYear
2012
fDate
17-19 June 2012
Firstpage
543
Lastpage
546
Abstract
Different CV curves of junction diode were observed in the MOSFET with 36nm MOS for the fist time. Traditional characterization results of source/body and drain /body junction diode from longer channel MOSFET and large diode are not the same as those in the shorter channel and small diode. In this paper we discussed the discrepancies of traditional diode characterization and proposed a new way for short change MOS with 36 nm gate length by S-parameters.
Keywords
MOSFET; S-parameters; UHF diodes; semiconductor device models; CV curves; MOSFET; RF model; S-parameters; drain-body junction diode; size 36 nm; source-body junction diode modelling; Fingers; Junctions; Logic gates; Radio frequency; Reactive power; Scattering parameters; Semiconductor device modeling; RF model; characterization; junction diode; short channel MOSFET;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location
Montreal, QC
ISSN
1529-2517
Print_ISBN
978-1-4673-0413-9
Electronic_ISBN
1529-2517
Type
conf
DOI
10.1109/RFIC.2012.6242342
Filename
6242342
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