Title :
A 4 bits Reflection type phase shifter based on Ga As FET
Author :
Mabrouki, M. ; Smida, A. ; Ghayoula, Ridha ; Gharsallah, Ali
Author_Institution :
Unit of Res. in High Freq. Electron. Circuits & Syst., Tunis El Manar Univ., Tunis, Tunisia
Abstract :
A 4 bits digital phase shifter is designed and simulated. It is based on 3-db hybrid coupler and totally twelve switches are used. The simulation results indicate an insertion loss better than -4dB, a return loss less than -20 dB and an error phase varied between 0.01° and 0.6° at 2.45 GHz. to achieve a 6 bits phase shifter, we increased the number of stages. This phase shifter present an insertion loss better than -5dB, a return loss less than -20db and an error phase varied between 0.1° and 1.7°. But, the circuit presents a large size. The Ga As FET switch used for switching is characterized by a very low DC power consumption, a fast switching speed and a low cost. Also, an array antenna of 8 patch elements connected to a 4 bits phase sifter is designed. The simulated results of the array indicate a return loss better than -10dB over 2.4-2.5 GHz and a gain equal 14 dB.
Keywords :
III-V semiconductors; UHF phase shifters; field effect transistor switches; gallium arsenide; microstrip antenna arrays; microwave phase shifters; power consumption; DC power consumption; FET switch; GaAs; array antenna; digital phase shifter; frequency 2.45 GHz; gain 14 dB; hybrid coupler; reflection type phase shifter; storage capacity 4 bit; storage capacity 6 bit; Arrays; Couplers; Directive antennas; Logic gates; Phase shifters; Phased arrays; Switches; Digital phase shifter; Ga As FET switch; Reflection type phases shifter; directive coupler; phased array antenna;
Conference_Titel :
Computer Applications & Research (WSCAR), 2014 World Symposium on
Conference_Location :
Sousse
Print_ISBN :
978-1-4799-2805-7
DOI :
10.1109/WSCAR.2014.6916830