DocumentCode :
2643311
Title :
Optoelectronic Applications Of GaAs Epilayers Containing Arsenic Precipitates
Author :
Warren, A.C. ; Woodall, J.M. ; McInturff, D.T. ; Melloch, M.R.
Author_Institution :
IBM Research Division
fYear :
1991
fDate :
29 Jul-2 Aug 1991
Firstpage :
39
Lastpage :
40
Keywords :
Absorption; Circuits; Gallium arsenide; Optical pulses; Optical receivers; Optical transmitters; Photoconductivity; Schottky barriers; Schottky diodes; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
Type :
conf
DOI :
10.1109/LEOSST.1991.638936
Filename :
638936
Link To Document :
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