Title :
[Copyright notice]
Abstract :
The following topics are dealt with: FinFET devices; NAND flash memory; high-k-metal gate scaling; low power and steep subtreshold technology; STT MRAM; 3D system integration; nonvolatile memory; ultrathin body devices; BEOL technology; CMOS platform design; embedded memory; scaled III-V transistor; high mobility-Ge devices; and noise phenomena.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; MRAM devices; NAND circuits; elemental semiconductors; flash memories; germanium; integrated circuit design; low-power electronics; random-access storage; 3D system integration; BEOL technology; CMOS platform design; FinFET devices; Ge; NAND flash memory; STT MRAM; embedded memory; high mobility-germanium devices; high-k-metal gate scaling; low power technology; noise phenomena; nonvolatile memory; scaled III-V transistor; steep subtreshold technology; ultrathin body devices;
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
DOI :
10.1109/VLSIT.2012.6242430
