Title :
FinFET parasitic resistance reduction by segregating shallow Sb, Ge and As implants at the silicide interface
Author :
Kenney, C.R. ; Ang, K.-W. ; Matthews, K. ; Liehr, M. ; Minakais, M. ; Pater, J. ; Rodgers, M. ; Kaushik, V. ; Novak, S. ; Gausepohl, S. ; Hobbs, C. ; Kirsch, P.D. ; Jammy, R.
Author_Institution :
SEMATECH, Albany, NY, USA
Abstract :
This paper reports a new contact technology comprising antimony (Sb) co-implantation and segregation to reduce Schottky barrier height (SBH) and parasitic series resistance for N-FinFETs. Experiments with shallow Sb, Ge and As co-implantation in the source/drain (S/D) regions of SOI FinFET found that all three implant species significantly reduced extrinsic resistance. The Sb implant with a 5e13 cm-2 dose produced the best result with a 31% reduction of extrinsic resistance and a corresponding Ion increase of 19%. This optimum Sb implant is shown to reduce specific contact resistivity (ρc) below 10-8Ω-cm2 by decreasing the SBH and increasing the barrier steepness. Electrostatic control comparable to the reference device indicates no degradation in short channel effects for either Sb, Ge or As. This low ρc is promising to address key FinFET scaling issues associated with parasitic series resistance for the 14nm node and beyond.
Keywords :
MOSFET; Schottky barriers; antimony; arsenic; contact resistance; germanium; ion implantation; silicon-on-insulator; As; FinFET parasitic resistance reduction; Ge; N-FinFET; S/D region; SBH; SOI FinFET; Sb; Schottky barrier height; barrier steepness; channel effect; coimplantation; contact resistivity; contact technology; electrostatic control; extrinsic resistance; implant species; parasitic series resistance; segregation; silicide interface; size 14 nm; source/drain region; FinFETs; Implants; Resistance; Schottky barriers; Schottky diodes; Silicides; Silicon;
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
DOI :
10.1109/VLSIT.2012.6242439