Title :
A new GIDL phenomenon by field effect of neighboring cell transistors and its control solutions in sub-30 nm NAND flash devices
Author :
Park, Il Han ; Hahn, Wook-Ghee ; Song, Ki-Whan ; Choi, Ki Hwan ; Choi, Hyun-Ki ; Lee, Sung Bok ; Lee, Chang-Sub ; Song, Jai Hyuk ; Han, Jin Man ; Kyoung, Kye Hyun ; Jun, Young-Hyun
Author_Institution :
Samsung Electron. Co., Ltd., Hwasung, South Korea
Abstract :
We present a new field effect mechanism on IGIDL in NAND flash strings. According to the proposed 5-terminal GIDL model, special care should be taken to optimize the biasing levels of inhibit scheme. Suggested incremental biasing scheme can be one of the solutions for reducing critical field that enhances boosting efficiency and maximizes memory yields.
Keywords :
field effect transistors; flash memories; 5-terminal GIDL model; GIDL phenomenon; NAND flash devices; NAND flash strings; field effect; neighboring cell transistors; Boosting; Current measurement; Flash memory; Junctions; Logic gates; Programming; Transistors;
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
DOI :
10.1109/VLSIT.2012.6242442
