Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG

Author

Müller, J. ; Yurchuk, E. ; Schlösser, T. ; Paul, J. ; Hoffmann, R. ; Müller, S. ; Martin, D. ; Slesazeck, S. ; Polakowski, P. ; Sundqvist, J. ; Czernohorsky, M. ; Seidel, K. ; Kücher, P. ; Boschke, R. ; Trentzsch, M. ; Gebauer, K. ; Schröder, U. ; Mikolaj

Author_Institution

Fraunhofer Center Nanoelectronic Technol., Dresden, Germany

fYear

2012

fDate

12-14 June 2012

Firstpage

25

Lastpage

26

Abstract

We report on the most aggressively scaled ferroelectric field effect transistor so far. These were successfully fabricated using ferroelectric Si:HfO₂ in a 28 nm HKMG stack (TiN/Si:HfO₂/SiO₂/Si). For a ± 5 V program/erase operation with pulses as short as 20 ns, reliable threshold voltage shifts were observed resulting in a memory window of about 0.9 V. We further demonstrate endurance characteristics matching demands of current nonvolatile memories utilizing wear leveling. Low retention loss was observed and extrapolated 10-year data storage can be expected.

Keywords

ferroelectricity; field effect transistors; hafnium compounds; random-access storage; silicon compounds; titanium compounds; HKMG; TiN-Si:HfO₂-SiO₂-Si; endurance characteristics; ferroelectric field effect transistor; ferroelectricity; memory window; nonvolatile data storage; nonvolatile memories; size 28 nm; threshold voltage; wear leveling; FETs; Hafnium compounds; Logic gates; Nonvolatile memory; Silicon; Switches; Voltage measurement; FeFET; HKMG; HfO2; NVM; ferroelectric;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2012 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4673-0846-5

Electronic_ISBN

0743-1562

Type

conf

DOI

10.1109/VLSIT.2012.6242443

Filename

6242443