Author :
Ragnarsson, Lars-Åke ; Adelmann, Christoph ; Higuchi, Yuichi ; Opsomer, Karl ; Veloso, Anabela ; Chew, Soon Aik ; Röhr, Erika ; Vecchio, Emma ; Shi, Xiaoping ; Devriendt, Katia ; Sebaai, Farid ; Kauerauf, Thomas ; Pawlak, Malgorzata Anna ; Schram, Tom ; V
Abstract :
Higher κ-value HfO2 (κ~30) was evaluated in replacement metal gate pMOS devices. The higher-κ was achieved by doping and anneal of the HfO2 causing crystallization into the cubic phase. The resulting gate-stack has up to 103 × lower gate-leakage current compared to a reference HfO2: JG at -1 V ~ 2 μA/cm2 at EOT~9.7 Å. The better JG - EOT-scaling, result in performance and reliability improvements when normalized to the JG.
Keywords :
MOS integrated circuits; crystallisation; integrated circuit reliability; EOT-scaling; HfO2; crystallization; cubic-phase; equivalent oxide thickness; gate-leakage current; gate-stack; low-VT replacement gate pMOS device; reliability improvement; replacement metal gate pMOS device; voltage -1 V; Dielectrics; Doping; Hafnium compounds; Logic gates; Materials; Reliability; EOT-scaling; High-κ; NBTI; TDDB; cubic phase HfO2; high-k last (HKL); replacement metal gate (RMG);
