DocumentCode
2643676
Title
Improvement Of Regrown Hetero-interface In n-GaInAs/i-InP/n-GaInAs Tunneling Diode
Author
Miyamoto, Yutaka ; Suemasu, Takashi ; Furuya, Kazuhito
Author_Institution
Tokyo Institute of Technology
fYear
1991
fDate
29 Jul-2 Aug 1991
Firstpage
41
Lastpage
42
Keywords
Current measurement; Current-voltage characteristics; Diodes; Surface treatment; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN
0-87942-618-7
Type
conf
DOI
10.1109/LEOSST.1991.638938
Filename
638938
Link To Document