Title :
Improvement Of Regrown Hetero-interface In n-GaInAs/i-InP/n-GaInAs Tunneling Diode
Author :
Miyamoto, Yutaka ; Suemasu, Takashi ; Furuya, Kazuhito
Author_Institution :
Tokyo Institute of Technology
fDate :
29 Jul-2 Aug 1991
Keywords :
Current measurement; Current-voltage characteristics; Diodes; Surface treatment; Tunneling;
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
DOI :
10.1109/LEOSST.1991.638938
