Title :
Process control & integration options of RMG technology for aggressively scaled devices
Author :
Veloso, A. ; Higuchi, Y. ; Chew, S.A. ; Devriendt, K. ; Ragnarsson, L. -Å ; Sebaai, F. ; Schram, T. ; Brus, S. ; Vecchio, E. ; Kellens, K. ; Röhr, E. ; Eneman, G. ; Simoen, E. ; Cho, M.J. ; Paraschiv, V. ; Crabbe, Y. ; Shi, X. ; Tielens, H. ; Van Ammel, A
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
We report on aggressively scaled RMG-HKL devices, with tight low-VT distributions [σ(VTsat) ~ 29mV (PMOS), ~ 49mV (NMOS) at Lgate~35nm] achieved through controlled EWF-metal alloying for NMOS, and providing an in-depth overview of its enabling features: 1) physical mechanisms, model supported by TCAD simulations and analysis techniques such as TEM, EDS; 2) process optimizations implementation: oxygen sources reduction, control of RF-PVD TiAl/TiN ratio and reduced Hgate, also impacting stress induced in the channel. Additional key features: 1) Al vs. W as fill-metal, with careful liner/barrier materials selection and tuning yielding well-behaved devices with tight Rgate distributions down to Lgate~20nm, and enabling both PMOS and NMOS low-VT values for high aspect-ratio gates (Hgate~60nm, Lgate≥30nm); 2) wet-etch vs. siconi clean for dummy-dielectric removal, with HfO2 post-deposition N2-anneal resulting in substantial BTI improvement without EOT or low-field/peak mobility penalty, and good noise response.
Keywords :
MOSFET; control engineering computing; optimisation; process control; semiconductor device manufacture; technology CAD (electronics); EWF-metal alloying; NMOS; PMOS; RMG technology; RMG-HKL devices; TCAD simulations; aggressively scaled devices; integration options; low-field/peak mobility penalty; noise response; process control; process optimizations; Alloying; Hafnium compounds; Logic gates; MOS devices; Noise; Stress; Tin;
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
DOI :
10.1109/VLSIT.2012.6242447