Title :
Advanced semiconductor modeling using the EMTP
Author :
Samihoeto ; Velasco, J. A Martinez ; Capolino, G.A.
Author_Institution :
Inst. Mediterraneen de Technol., Marseille, France
Abstract :
Advanced models of two semiconductor devices, the diode and IGBT, have been developed using a general purpose program, the Electromagnetic Transients Program (EMTP). These models are based on semiconductor physics and reproduce with high accuracy their behaviour during switching phenomena. The aim of this paper is to present a short summary of EMTP capabilities and detail the approach used for the development of advanced semiconductor models. Simulation results show the effectiveness of the representation developed in this work
Keywords :
bipolar transistor switches; digital simulation; electronic engineering computing; insulated gate bipolar transistors; power bipolar transistors; power engineering computing; power semiconductor diodes; power semiconductor switches; semiconductor device models; software packages; EMTP; Electromagnetic Transients Program; IGBT; accuracy; computer simulation; diode; models; semiconductor modeling; switching phenomena; EMTP; Electric resistance; Equations; Insulated gate bipolar transistors; Power electronics; Power system simulation; Power system transients; Semiconductor devices; Semiconductor diodes; Semiconductor materials;
Conference_Titel :
Computers in Power Electronics, 1994., IEEE 4th Workshop on
Conference_Location :
Trois-Rivieres, Que.
Print_ISBN :
0-7803-2091-3
DOI :
10.1109/CIPE.1994.396695
