Title :
Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays
Author :
Lee, Wootae ; Park, Jubong ; Shin, Jungho ; Woo, Jiyong ; Kim, Seonghyun ; Choi, Godeuni ; Seungjae Jung ; Park, Sangsu ; Lee, Daeseok ; Cha, Euijun ; Lee, Hyung Dong ; Kim, Soo Gil ; Chung, Suock ; Hwang, Hyunsang
Author_Institution :
Dept. of Mat. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
We demonstrate a varistor-type bidirectional switch (VBS) with excellent selection property for future 3D bipolar resistive memory array. A highly non-linear VBS showed superior performances including high current density (>;3×107A/cm2) and high selectivity (~104). The non-linear I-V characteristics can be explained by varistor-type multi-layer tunnel barriers, which were formed by Ta incorporation into thin TiO2. Furthermore, the 1S1R device showed excellent suppression of leakage current (>;104 reduction) at 1/2VREAD, which is promising for ultra-high density resistive memory applications.
Keywords :
current density; random-access storage; titanium compounds; 1S1R device; 3D bipolar resistive memory arrays; TiO2; high current density; high selectivity; leakage current suppression; nonlinear I-V characteristics; nonlinear VBS; ultra-high density resistive memory applications; varistor-type bidirectional switch; varistor-type multilayer tunnel barriers; Current density; Leakage current; Low voltage; Performance evaluation; Switches; Temperature measurement; Very large scale integration;
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
DOI :
10.1109/VLSIT.2012.6242449
