Single stage RF amplifier at 5.8GHz ISM band with IEEE 802.11a standard

Author

Othman, A.R. ; Ibrahim, I.M. ; Samingan, M. S A S ; Aziz, A. A A ; Selamat, M. F M ; Halim, H.C.

Author_Institution

Fak. Kejuruteraan Elektron. Dan Kejuruteraan Komputer, Univ. Teknikal Malaysia Melaka, Ayer Keroh

fYear

2007

fDate

4-6 Dec. 2007

Firstpage

1

Lastpage

4

Abstract

This paper describes the circuit design and measurement of a single stage RF amplifier for 5.8 GHz-band with IEEE 802.11a standards for WLAN applications. The circuit was simulated using Ansoft Designer where a 14 dB of gain; input and output return loss less than -10 dB were observed. The GaAs hetrojunction FET (HFET), capacitors and resistors are combined with the microstrip line pattern by silver epoxy. A 1 dB output power compression point (P_1dB) of 17 dBm and 14.56d B of gain when -1 dBm power injected under 6 V and frac12 I_dss biasing are measured.

Keywords

III-V semiconductors; MMIC amplifiers; gallium arsenide; high electron mobility transistors; integrated circuit design; integrated circuit modelling; microstrip lines; microwave field effect transistors; wireless LAN; Ansoft Designer; GaAs; IEEE 802.11a standard; ISM band; WLAN application; capacitors; circuit design; frequency 5.8 GHz; hetrojunction FET; microstrip line pattern; resistors; silver epoxy; single stage RF amplifier; Circuit simulation; Circuit synthesis; FETs; Gain; Gallium arsenide; HEMTs; MODFETs; Measurement standards; Radiofrequency amplifiers; Wireless LAN; Gain; Matching Circuit; RF Amplifier; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Electromagnetics, 2007. APACE 2007. Asia-Pacific Conference on

Conference_Location

Melaka

Print_ISBN

978-1-4244-1434-5

Electronic_ISBN

978-1-4244-1435-2

Type

conf

DOI

10.1109/APACE.2007.4603948

Filename

4603948