Nonvolatile 32×32 crossbar atom switch block integrated on a 65-nm CMOS platform

Author

Banno, N. ; Tada, M. ; Sakamoto, Takanori ; Okamoto, K. ; Miyamura, M. ; Iguchi, N. ; Nohisa, T. ; Hada, H.

Author_Institution

Low-power Electron. Assoc. & Project (LEAP), Tsukuba, Japan

fYear

2012

fDate

12-14 June 2012

Firstpage

39

Lastpage

40

Abstract

A 32×32-crossbar complementary-atom-switch (CAS) block has been successfully integrated in a 65nm-node CMOS platform without degrading CMOS properties. The CAS connecting to two Cu lines at each edge is composed of a dual layered electrolyte of TiO₂/polymer, which prevents Cu oxidation during the fabrication of the switch and Cu BEOL. The reduction of Cu-surface roughness and the electric field concentration at the edge of Cu electrode enable a high I_on/I_off ratio and a low programming voltages of 1.8V with distribution as low as σ=0.2V.

Keywords

CMOS integrated circuits; copper; electric fields; electrodes; oxidation; surface roughness; titanium compounds; BEOL; CAS block; CMOS platform; CMOS properties; Cu; TiO₂; crossbar complementary-atom-switch block; dual layered electrolyte; electric field concentration; electrode; nonvolatile crossbar atom switch block; oxidation; size 65 nm; surface roughness; switch fabrication; voltage 1.8 V; CMOS integrated circuits; Electric fields; Electrodes; Programming; Switches; Switching circuits; System-on-a-chip; Atom switch; BEOL device; Nonvolatile programmable logic;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2012 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4673-0846-5

Electronic_ISBN

0743-1562

Type

conf

DOI

10.1109/VLSIT.2012.6242450

Filename

6242450