Title :
RIBE And Sulfur-passivated For GaAiAs/GaAs BH Lasers
Author :
Tamanuki, T. ; Koyama, F. ; Iga, K.
Author_Institution :
Tokyo Institute of Technology
fDate :
29 Jul-2 Aug 1991
Keywords :
Charge carrier density; Electrodes; Electrons; Gallium arsenide; Gold; Leakage current; Radiative recombination; Semiconductor lasers; Spontaneous emission; Threshold current;
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
DOI :
10.1109/LEOSST.1991.638939
