DocumentCode
2643868
Title
RIBE And Sulfur-passivated For GaAiAs/GaAs BH Lasers
Author
Tamanuki, T. ; Koyama, F. ; Iga, K.
Author_Institution
Tokyo Institute of Technology
fYear
1991
fDate
29 Jul-2 Aug 1991
Firstpage
43
Lastpage
44
Keywords
Charge carrier density; Electrodes; Electrons; Gallium arsenide; Gold; Leakage current; Radiative recombination; Semiconductor lasers; Spontaneous emission; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN
0-87942-618-7
Type
conf
DOI
10.1109/LEOSST.1991.638939
Filename
638939
Link To Document