DocumentCode :
2643876
Title :
Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio
Author :
Mohata, D.K. ; Bijesh, R. ; Zhu, Y. ; Hudait, M.K. ; Southwick, R. ; Chbili, Z. ; Gundlach, D. ; Suehle, J. ; Fastenau, J.M. ; Loubychev, D. ; Liu, A.K. ; Mayer, T.S. ; Narayanan, V. ; Datta, S.
Author_Institution :
Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fYear :
2012
fDate :
12-14 June 2012
Firstpage :
53
Lastpage :
54
Abstract :
Staggered tunnel junction (GaAs0.35Sb0.65/In0.7Ga0.3As) is used to demonstrate heterojunction tunnel FET (TFET) with the highest drive current, Ion, of 135μA/μm and highest Ion/Ioff ratio of 2.7×104 (Vds=0.5V, Von-Voff=1.5V). Effective oxide thickness (EOT) scaling (using Al2O3/HfO2 bilayer gate stack) coupled with pulsed I-V measurements (suppressing Dit response) enable demonstration of steeper switching TFET.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; hafnium compounds; interface states; oxidation; tunnel transistors; Al2O3-HfO2; EOT scaling; GaAs0.35Sb0.65-In0.7Ga0.3As; bilayer gate stack; effective oxide thickness; heteroepitaxy; heterojunction tunnel FET; high drive current; high on-off ratio; interface state; pulsed I-V measurement; scaled gate stack; staggered tunnel junction; switching TFET; voltage 0.5 V; voltage 1.5 V; Gallium arsenide; Heterojunctions; Logic gates; Performance evaluation; Pulse measurements; Switches; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
ISSN :
0743-1562
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
Type :
conf
DOI :
10.1109/VLSIT.2012.6242457
Filename :
6242457
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2643876
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