Title :
High-speed and reliable domain wall motion device: Material design for embedded memory and logic application
Author :
Fukami, S. ; Yamanouchi, M. ; Koyama, T. ; Ueda, K. ; Yoshimura, Y. ; Kim, K.-J. ; Chiba, D. ; Honjo, H. ; Sakimura, N. ; Nebashi, R. ; Kato, Y. ; Tsuji, Y. ; Morioka, A. ; Kinoshita, K. ; Miura, S. ; Suzuki, T. ; Tanigawa, H. ; Ikeda, S. ; Sugibayashi, T
Author_Institution :
Center for Spintronics Integrated Syst., Tohoku Univ., Sendai, Japan
Abstract :
High-speed capability and excellent reliability of a magnetic domain wall (DW) motion device required for embedded memory and logic-in-memory applications were achieved by optimizing the film stack structure of Co/Ni wire. Low-current with high-speed writing, high heat resistance, low error rate, wide operation range for temperature and magnetic field, high retention, and high endurance features were confirmed.
Keywords :
MRAM devices; cobalt; logic devices; magnetic domain walls; magnetic field effects; nickel; reliability; Co-Ni; Co/Ni wire; embedded memory application; film stack structure; high heat resistance; high-speed domain wall motion device; high-speed writing; logic-in-memory applications; low error rate; low-current; magnetic domain wall; magnetic field; material design; reliable domain wall motion device; Current density; Magnetic domain walls; Magnetic domains; Magnetic tunneling; Nickel; Perpendicular magnetic anisotropy; MRAM; logic-in-memory; magnetic domain wall;
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
DOI :
10.1109/VLSIT.2012.6242461
