Title :
A novel cross point one-resistor (0T1R) conductive bridge random access memory (CBRAM) with ultra low set/reset operation current
Author :
Lee, F.M. ; Lin, Y.Y. ; Lee, M.H. ; Chien, W.C. ; Lung, H.L. ; Hsieh, K.Y. ; Lu, C.Y.
Author_Institution :
Macronix Emerging Central Lab., Macronix Int. Co., Ltd., Hsinchu, Taiwan
Abstract :
Using the dual Vth characteristics of a multi-layer SiO2/SiO2/Cu-GST conducting bridge (CB) structure we can construct a one-resistor cell without an access device (0T1R). Like 1T Flash memory the Vth is used to store the logic state thus leaving all devices always at high resistance state and a separate isolation device is not needed. The Vth of the cell is determined by the presence of CB in the SiO2 layer only. The CB in the SiO2 is present only temporarily during reading, and is spontaneously dissolved afterward. This spontaneous rupture of the filament in the SiO2 layer greatly reduces the switching current as well as reducing the read disturb. The mechanism for the spontaneous rupture phenomenon is investigated.
Keywords :
copper; flash memories; germanium compounds; hafnium compounds; random-access storage; resistors; silicon compounds; 0T1R; CBRAM; HfO2-SiO2-Cu-Ge2Sb2Te5; conductive bridge random access memory; cross point one-resistor cell; flash memory; isolation device separation; resistance state; switching current; ultralow set-reset operation current; Arrays; Flash memory; Hafnium compounds; Resistance; Robustness; Threshold voltage; Transient analysis;
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
DOI :
10.1109/VLSIT.2012.6242464
