Field-driven ultrafast sub-ns programming in WAl2O3TiCuTe-based 1T1R CBRAM system

Author

Goux, L. ; Sankaran, K. ; Kar, G. ; Jossart, N. ; Opsomer, K. ; Degraeve, R. ; Pourtois, G. ; Rignanese, G.-M. ; Detavernier, C. ; Clima, S. ; Chen, Y.-Y. ; Fantini, A. ; Govoreanu, B. ; Wouters, D.J. ; Jurczak, M. ; Altimime, L. ; Kittl, J.A.

Author_Institution

Imec, Leuven, Belgium

fYear

2012

fDate

12-14 June 2012

Firstpage

69

Lastpage

70

Abstract

We optimize a 90nm-wide CuTe-based 1T1R CBRAM cell for highly controlled and ultrafast programming by engineering Al₂O₃ electrolyte and Ti buffer layers of appropriate density and thickness resp. By means of electrical and ab initio modeling, we demonstrate that switching is mainly controlled by field-driven motion of Cu⁺ species. Sub-ns programming is allowed by strong ionic-hopping barrier reduction over short insulating gap. Complete picture of conductance and switching phenomenology is shown in the entire operation range.

Keywords

alumina; copper compounds; random-access storage; titanium; tungsten; 1T1R CBRAM cell; W-Al₂O₃-Ti-CuTe; ab initio modeling; buffer layers; conductance phenomenology; conductive-bridging RAM; electrical modeling; engineering electrolyte; field-driven ultrafast sub-ns programming; insulating gap; ionic-hopping barrier reduction; size 90 nm; switching phenomenology; Aluminum oxide; Programming; Resistance; Switches; Thermal conductivity; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2012 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4673-0846-5

Electronic_ISBN

0743-1562

Type

conf

DOI

10.1109/VLSIT.2012.6242465

Filename

6242465