Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

Author

Lee, Seung Ryul ; Kim, Young-Bae ; Chang, Man ; Kim, Kyung Min ; Lee, Chang Bum ; Hur, Ji Hyun ; Park, Gyeong-Su ; Lee, Dongsoo ; Lee, Myoung-Jae ; Kim, Chang Jung ; Chung, U-In ; Yoo, In-Kyeong ; Kim, Kinam

Author_Institution

Samsung Adv. Inst. of Technol., Yongin, South Korea

fYear

2012

fDate

12-14 June 2012

Firstpage

71

Lastpage

72

Abstract

A highly reliable RRAM with multi-level cell (MLC) characteristics were fabricated using a triple-layer structure (base layer/oxygen exchange layer/barrier layer) for the storage class memory applications. A reproducible multi-level switching behaviour was successfully observed, and simulated by the modulated Schottky barrier model. Morevoer, a new programming algorithm was developed for more reliable and uniform MLC operation. As a result, more than 10⁷ cycles of switching endurance and 10 years of data retention at 85°C for all the 2 bit/cell operation were archieved.

Keywords

Schottky barriers; integrated circuit reliability; random-access storage; tantalum compounds; MLC characteristics; TaO_x; modulated Schottky barrier model; multilevel cell characteristics; programming algorithm; reproducible multilevel switching behaviour; storage class memory; temperature 85 degC; time 10 year; triple-layer structure; triple-layered RRAM; Ions; Modulation; Programming; Reliability; Resistance; Switches; Very large scale integration; MLC; RRAM; multi-level cell; nonvolatile memory; resistive switching;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2012 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4673-0846-5

Electronic_ISBN

0743-1562

Type

conf

DOI

10.1109/VLSIT.2012.6242466

Filename

6242466