Title :
Conductive filament scaling of TaOx bipolar ReRAM for long retention with low current operation
Author :
Ninomiya, T. ; Takagi, T. ; Wei, Z. ; Muraoka, S. ; Yasuhara, R. ; Katayama, K. ; Ikeda, Y. ; Kawai, K. ; Kato, Y. ; Kawashima, Y. ; Ito, S. ; Mikawa, T. ; Shimakawa, K. ; Aono, K.
Author_Institution :
Device Module Dev. Center, Panasonic Corp., Kyoto, Japan
Abstract :
We demonstrate for the first time that the density of oxygen vacancy in a conductive filament plays a key role in ensuring data retention. We achieve very good retention results up to 100 hours at 150°C even under the low current operation due to the scaling of conductive filament size while retaining sufficiently high density of oxygen vacancy.
Keywords :
conducting materials; random-access storage; tantalum compounds; TaOx; bipolar ReRAM; conductive filament scaling; oxygen vacancy density; resistive random-access memory; temperature 150 degC; Arrays; Electric breakdown; Equations; Indium tin oxide; Mathematical model; Resistance; Very large scale integration;
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
DOI :
10.1109/VLSIT.2012.6242467
