DocumentCode :
2644050
Title :
Performance of Avalanche Diode Oscillators with Large Leakage Current
Author :
Gutmann, R.J. ; Borrego, J.M.
Volume :
74
Issue :
1
fYear :
1974
fDate :
12-14 June 1974
Firstpage :
306
Lastpage :
308
Abstract :
Experimental results of the RF performance of 500 milliwatt CW, X-band IMPATT diode oscillators and 30 watt pulsed, S-band TRAPATT diode oscillators with large leakage current are presented. The leakage current was varied from 10 microamps to 10 milliamps by varying the dose rate of high energy electrons from a linear accelerator. Correlation obtained with device models indicate that the principal effects of leakage current on avalanche diode oscillator characteristics have been properly identified.
Keywords :
Current measurement; Diodes; Electron traps; Equivalent circuits; Leakage current; Linear accelerators; Oscillators; Radio frequency; Testing; Thermal quenching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1974 S-MTT International
Conference_Location :
Atlanta, Georgia, USA
Type :
conf
DOI :
10.1109/MWSYM.1974.1123583
Filename :
1123583
Link To Document :
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