Author :
Degraeve, R. ; Fantini, A. ; Clima, S. ; Govoreanu, B. ; Goux, L. ; Chen, Y.Y. ; Wouters, D.J. ; Roussel, Ph ; Kar, G.S. ; Pourtois, G. ; Cosemans, S. ; Kittl, J.A. ; Groeseneken, G. ; Jurczak, M. ; Altimime, L.
Abstract :
An analytic dynamic hour glass model for HfO2 RRAM is demonstrated, describing the reset as a dynamic equilibrium process and the set as a constriction growth limited by ion mobility and current compliance. The dependence on time, voltage and forming conditions is in good constriction growth agreement with experiments. Since the model is fully analytical, it can be implemented in a circuit simulator.
Keywords :
hafnium compounds; ion mobility; random-access storage; HfO2; RESET; RRAM; SET; circuit simulator; constriction growth; current compliance; dynamic equilibrium process; dynamic hour glass model; ion mobility; Glass; Hafnium compounds; Mobile communication; Predictive models; Tin; Transient analysis;
