DocumentCode :
2644062
Title :
High Efficiency Read Diode Amplifier
Author :
Tsai, W.C. ; Kim, C.K. ; Gray, R.E.
Volume :
74
Issue :
1
fYear :
1974
fDate :
12-14 June 1974
Firstpage :
309
Lastpage :
311
Abstract :
Impedance characteristics of Read-profile IMPATT diodes are evaluated and amplifiers operating in the stable reflective mode have been designed based on the measured diode impedance. Power output of up to 4.5 Watts was obtained in a one stage single diode amplifier with a gain of 4.5 dB and an efficiency of 22 percent.
Keywords :
Circuits; Doping profiles; Gallium arsenide; Impedance measurement; Microwave devices; Packaging; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Schottky diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1974 S-MTT International
Conference_Location :
Atlanta, Georgia, USA
Type :
conf
DOI :
10.1109/MWSYM.1974.1123584
Filename :
1123584
Link To Document :
بازگشت