• DocumentCode
    2644062
  • Title

    High Efficiency Read Diode Amplifier

  • Author

    Tsai, W.C. ; Kim, C.K. ; Gray, R.E.

  • Volume
    74
  • Issue
    1
  • fYear
    1974
  • fDate
    12-14 June 1974
  • Firstpage
    309
  • Lastpage
    311
  • Abstract
    Impedance characteristics of Read-profile IMPATT diodes are evaluated and amplifiers operating in the stable reflective mode have been designed based on the measured diode impedance. Power output of up to 4.5 Watts was obtained in a one stage single diode amplifier with a gain of 4.5 dB and an efficiency of 22 percent.
  • Keywords
    Circuits; Doping profiles; Gallium arsenide; Impedance measurement; Microwave devices; Packaging; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1974 S-MTT International
  • Conference_Location
    Atlanta, Georgia, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1974.1123584
  • Filename
    1123584