Title :
Performance and Reliability of K/sub a/-Band GaAs IMPATT Diodes
Author :
Murphy, R.A. ; Lindley, W.T. ; Peterson, D.F. ; Staecker, P.
Abstract :
K/sub a/-band GaAs p-n junction IMPATT diodes have been fabricated which have delivered 450 mW of added power with 9.6% efficiency at a junction temperature of 275/spl deg/C. Results of life tests predict operating life in excess of five years at this temperature,
Keywords :
Electromagnetic heating; Fabrication; Gallium arsenide; Life testing; Metallization; P-n junctions; Schottky barriers; Schottky diodes; Thermal resistance; Titanium;
Conference_Titel :
Microwave Symposium Digest, 1974 S-MTT International
Conference_Location :
Atlanta, Georgia, USA
DOI :
10.1109/MWSYM.1974.1123586
