DocumentCode :
2644103
Title :
Replacement metal gate extendible to 11 nm technology
Author :
Yoshida, Naomi ; Fu, Xinyu ; Xu, Kun ; Lei, Yu ; Yang, Haichun ; Sun, Shiyu ; Chen, Hao ; Darlak, Andrew ; Donohoe, Ray ; Lazik, Christopher ; Jakkaraju, Rajkumar ; Noori, Atif ; Hung, Steven ; Peidous, Igor ; Chang, Chorng-Ping ; Brand, Adam
Author_Institution :
Appl. Mater., Santa Clara, CA, USA
fYear :
2012
fDate :
12-14 June 2012
Firstpage :
81
Lastpage :
82
Abstract :
This paper describes novel Co-Al metal fill capable of filling sub-10nm trenches. Co-Al fill shows advantages in threshold voltage (VTH) variation. The conductivity of the fill was evaluated using a Co-Al alloy conductance model. By demonstrating better VTH variability, superior conductivity and gap fill, Co-Al shows extendibility to the 11nm metal gate and beyond.
Keywords :
CMOS integrated circuits; MOSFET; aluminium alloys; cobalt alloys; electrical conductivity; nanostructured materials; CoAl; alloy conductance model; fill conductivity; gap fill; metal fill; replacement metal gate extendibility; size 11 nm; superior conductivity; threshold voltage variation; trench filling; Conductivity; FinFETs; High K dielectric materials; Logic gates; MOSFET circuits; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
ISSN :
0743-1562
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
Type :
conf
DOI :
10.1109/VLSIT.2012.6242471
Filename :
6242471
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2644103
بازگشت