Title :
Tunable Millimeter-Wave Packaged IMPATT Diode Oscillators
Author :
Weller, K.P. ; English, D.L. ; Kuno, H.J.
Abstract :
Broadband mechanically tunable V-band (50-75 GHz) and W-band (75-110 GHz) IMPATT oscillators have been developed using packaged silicon p+n junction diodes. A tuning bandwidth of 20% with minimum output of over 50 mW is obtained in V-band and 6% bandwidth with minimum output over 25 mW is obtained in W-band. Higher power but more limited tuning bandwidth results from using other diode structures.
Keywords :
Bandwidth; Circuit optimization; Copper; Diodes; Frequency; Microwave oscillators; Packaging; Silicon; Tunable circuits and devices; Tuning;
Conference_Titel :
Microwave Symposium Digest, 1974 S-MTT International
Conference_Location :
Atlanta, Georgia, USA
DOI :
10.1109/MWSYM.1974.1123588
