DocumentCode :
2644141
Title :
The effect of MOSFET second-order nonlinearity on active inductor-based oscillators
Author :
Lee, Ler Chun ; A´ain, A. ; Kordesch, Albert Victor
Author_Institution :
Fac. of Electr. Eng., Univ. of Technol. Malaysia, Johor Bahru
fYear :
2007
fDate :
4-6 Dec. 2007
Firstpage :
1
Lastpage :
4
Abstract :
Second-order nonlinearity of the MOSFET has significant impact on active inductor (AI) based oscillators, regardless of whether they are single-ended or differential. By using Taylor series expansion, this paper shows that second-order nonlinearity of the MOSFET will cause a shift in the DC biasing of an AI-based oscillator, depending on oscillation amplitude. The DC bias shift results in a change of the transistor transconductance and parasitic components from their original value, which will affect the oscillator resonance frequency. This explains why a small-signal S-parameter simulation is not sufficient to accurately predict the oscillation frequency and tuning range of AI-based oscillators, even at moderate oscillation amplitudes.
Keywords :
MOSFET; S-parameters; oscillators; series (mathematics); DC biasing; MOSFET; S-parameter simulation; Taylor series expansion; active inductor-based oscillators; second-order nonlinearity; transistor transconductance; Active inductors; Artificial intelligence; MOSFET circuits; Oscillators; Predictive models; Resonance; Resonant frequency; Scattering parameters; Taylor series; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Electromagnetics, 2007. APACE 2007. Asia-Pacific Conference on
Conference_Location :
Melaka
Print_ISBN :
978-1-4244-1434-5
Electronic_ISBN :
978-1-4244-1435-2
Type :
conf
DOI :
10.1109/APACE.2007.4603974
Filename :
4603974
Link To Document :
بازگشت