• DocumentCode
    2644141
  • Title

    The effect of MOSFET second-order nonlinearity on active inductor-based oscillators

  • Author

    Lee, Ler Chun ; A´ain, A. ; Kordesch, Albert Victor

  • Author_Institution
    Fac. of Electr. Eng., Univ. of Technol. Malaysia, Johor Bahru
  • fYear
    2007
  • fDate
    4-6 Dec. 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Second-order nonlinearity of the MOSFET has significant impact on active inductor (AI) based oscillators, regardless of whether they are single-ended or differential. By using Taylor series expansion, this paper shows that second-order nonlinearity of the MOSFET will cause a shift in the DC biasing of an AI-based oscillator, depending on oscillation amplitude. The DC bias shift results in a change of the transistor transconductance and parasitic components from their original value, which will affect the oscillator resonance frequency. This explains why a small-signal S-parameter simulation is not sufficient to accurately predict the oscillation frequency and tuning range of AI-based oscillators, even at moderate oscillation amplitudes.
  • Keywords
    MOSFET; S-parameters; oscillators; series (mathematics); DC biasing; MOSFET; S-parameter simulation; Taylor series expansion; active inductor-based oscillators; second-order nonlinearity; transistor transconductance; Active inductors; Artificial intelligence; MOSFET circuits; Oscillators; Predictive models; Resonance; Resonant frequency; Scattering parameters; Taylor series; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Electromagnetics, 2007. APACE 2007. Asia-Pacific Conference on
  • Conference_Location
    Melaka
  • Print_ISBN
    978-1-4244-1434-5
  • Electronic_ISBN
    978-1-4244-1435-2
  • Type

    conf

  • DOI
    10.1109/APACE.2007.4603974
  • Filename
    4603974