DocumentCode :
2644262
Title :
Practical implications of via-middle Cu TSV-induced stress in a 28nm CMOS technology for Wide-IO logic-memory interconnect
Author :
West, Jevin ; Choi, Yeon Suk ; Vartuli, C.
Author_Institution :
Adv. CMOS Group, Texas Instrum., Dallas, TX, USA
fYear :
2012
fDate :
12-14 June 2012
Firstpage :
101
Lastpage :
102
Abstract :
The impact of isolated and arrayed 10×60μm via-middle Cu TSVs on 8LM 28nm node CMOS poly-SiON P/NFETs was electrically measured for proximities >;4 μm at 27C and 105C. The largest observed shift in Ion (<;2.3%) is significantly less than that from other context-dependent sources such as dual stress liner boundaries (~10%). NanoBeam Diffraction measurements of Si strain within 5μm of TSVs were acquired for samples prepared from fully processed wafers, showing that for proximity >;1.5μm the impact of TSVs is negligible. Interaction with overlying interconnect is mitigated through optimization of post-TSV plating anneal to achieve <; 200 ÅCu pumping and by introducing a TSV unit cell designed to minimize the impact on local environment.
Keywords :
CMOS logic circuits; CMOS memory circuits; copper; integrated circuit interconnections; three-dimensional integrated circuits; 8LM node; CMOS P-NFET; CMOS technology; TSV unit cell; context-dependent sources; dual stress liner boundaries; local environment; nanobeam diffraction measurements; post-TSV plating anneal optimization; size 28 nm; size 5 mum; temperature 105 degC; temperature 27 degC; via-middle TSV-induced stress; wide-IO logic-memory interconnect; Annealing; CMOS integrated circuits; Silicon; Strain; Strain measurement; Stress; Through-silicon vias; 28nm CMOS; Cu pumping; NBD; TSV; TSV-induced strain; context-dependent stress; proximity effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
ISSN :
0743-1562
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
Type :
conf
DOI :
10.1109/VLSIT.2012.6242481
Filename :
6242481
Link To Document :
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