DocumentCode
2644317
Title
Application of Dual-Gate GaAs FET to Microwave Variable-Gain Amplifier
Author
Maeda, M. ; Minai, Y.
Volume
74
Issue
1
fYear
1974
fDate
12-14 June 1974
Firstpage
351
Lastpage
353
Abstract
The dual-gate GaAs FET has a gain control characteristic at frequencies ten times higher than that of the Si MOS tetrode. This paper demonstrates the feasibility of the dual-gate GaAs FET for a microwave variable-gain amplifier.
Keywords
Admittance; Capacitance; Equivalent circuits; Frequency; Gain control; Gallium arsenide; Microwave FETs; Microwave amplifiers; Microwave devices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1974 S-MTT International
Conference_Location
Atlanta, Georgia, USA
Type
conf
DOI
10.1109/MWSYM.1974.1123600
Filename
1123600
Link To Document