Title :
Application of Dual-Gate GaAs FET to Microwave Variable-Gain Amplifier
Author :
Maeda, M. ; Minai, Y.
Abstract :
The dual-gate GaAs FET has a gain control characteristic at frequencies ten times higher than that of the Si MOS tetrode. This paper demonstrates the feasibility of the dual-gate GaAs FET for a microwave variable-gain amplifier.
Keywords :
Admittance; Capacitance; Equivalent circuits; Frequency; Gain control; Gallium arsenide; Microwave FETs; Microwave amplifiers; Microwave devices; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1974 S-MTT International
Conference_Location :
Atlanta, Georgia, USA
DOI :
10.1109/MWSYM.1974.1123600
