DocumentCode :
2644333
Title :
Gas Source MBE For InGaAs/lnGaAsP MQW Lasers And InGaAsP/lnAiAs Superlattice APD´s
Author :
Iwamura, Hidetoshi ; Kagawa, Toshiaki
Author_Institution :
NTT Opto-electronics Laboratories
fYear :
1991
fDate :
29 Jul-2 Aug 1991
Firstpage :
49
Lastpage :
50
Keywords :
Dark current; Epitaxial growth; Gas lasers; Gases; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Quantum well devices; Superlattices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
Type :
conf
DOI :
10.1109/LEOSST.1991.638942
Filename :
638942
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2644333
بازگشت